Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-05-12
1998-05-26
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 72, H01L 29786
Patent
active
057570302
ABSTRACT:
A thin film transistor and a producing method therefor having a semiconductor layer which is formed in an islandish form and constitutes a channel forming region, a source region and a drain region, wherein the edge portion of the islandish semiconductor layer is so designed as to be gradually or monotonously thinned toward the edge thereof to prevent the gate insulating film covering the active layer from being thinned at the edge portion of the semiconductor layer. The gate insulating film is also smoothly formed to prevent an electric field concentration phenomenon at the edge portion.
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Codama Mitsufumi
Kondo Noriaki
Fahmy Wael
Ferguson Jr. Gerald J.
Hardy David B.
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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