Thin film transistor with a thin layer of silicon nitride

Details Thin film transistor with a thin layer of silicon nitride Thin film transistor with a thin layer of silicon nitride

1991-04-23

1992-07-14

Hille, Rolf

357 4, 357 2, 357 54, H01L 2901, H01L 2712, H01L 4500, H01L 2934

Patent

active

051307723

ABSTRACT:
There is disclosed a thin film transistor, wherein the lengthwise direction of the source is made parallel to that of the gate, and an insulating layer is continuously deposited between double gates and the semiconductor layer to obstruct the pin holes generated during first deposition. Further, between overlapping semiconductor layers there is interposed an insulating layer to prevent short circuit of the electrodes due to the pin holes in the semiconductor layers.

REFERENCES:
patent: 5032536 (1991-07-01), Oritsuki et al.
"Change Trapping Instabilities in Amorphous Silicon-Silicon Nitride Thin-Film Transistors" M. J. Powell, Applied Physics Letters, 43, Sep. 15, 1983, pp. 597-599.
"Semiconductor Devices Physics and Technology", S. M. Sze, Wiley, 1955.

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