Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-06-14
2005-06-14
Brock II, Paul E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S184000, C257S187000
Reexamination Certificate
active
06906342
ABSTRACT:
An optical detecting sensor includes a sensor thin film transistor generating an optical current in response to incident light reflected from an object; a storage capacitor storing charges of the optical current generated in the sensor thin film transistor; and a switch thin film transistor controlling release of the stored charges of the storage capacitor to an outer circuit for display of image of the object, having dual-layered source and drain electrodes of transparent conducting material and metal material, an active layer and a gate electrode. The switch thin film transistor further includes an ohmic contact layer on the active layer through which the dual-layered drain and source electrodes contact the active layer.
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Chang Youn Gyoung
Kim Jeong Hyun
Lee Jae Kyun
Brock II Paul E
LG. Philips LCD Co. Ltd.
McKenna Long & Aldridge LLP
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