Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2006-12-19
2006-12-19
Richards, N. Drew (Department: 2815)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S149000, C438S455000
Reexamination Certificate
active
07151044
ABSTRACT:
The invention reduces the size of an element chip and reduces the manufacturing cost in a thin film transistor type display device in which thin film transistors are formed on a first substrate, wiring lines are formed on a second substrate, and the element chip, including one or more thin film transistors, is peeled off from the first substrate and transferred to the second substrate. In the patterning process of the thin film transistors, holographic lithography or a dynamic auto focus system is used, a design rule of 1.0 μm or less is used, and only a polycrystalline silicon layer and a first metal layer are used as the wiring lines of the element chip.
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Iriguchi Chiharu
Kimura Mutsumi
Richards N. Drew
Seiko Epson Corporation
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