Thin film transistor, thin film transistor substrate,...

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

Reexamination Certificate

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C252S518100

Reexamination Certificate

active

08038857

ABSTRACT:
Provided are a thin film transistor substrate having a transparent electroconductive film in which residues and so on resulting etching are hardly generated; a process for producing the same; and a liquid crystal display using this thin film transistor substrate.A thin film transistor substrate, comprising a transparent substrate,a source electrode formed over the transparent substrate, a drain electrode formed over the transparent substrate, and a transparent pixel electrode formed over the transparent substrate, wherein the transparent pixel electrode is a transparent electroconductive film which is made mainly of indium oxide, and further comprises one or two or more oxides selected from tungsten oxide, molybdenum oxide, nickel oxide and niobium oxide, and the transparent pixel electrode is electrically connected to the source electrode or the drain electrode; a process for producing the same; and a liquid crystal display using this thin film transistor substrate.

REFERENCES:
patent: 5667853 (1997-09-01), Fukuyoshi et al.
patent: 5972527 (1999-10-01), Kaijou et al.
patent: 6033542 (2000-03-01), Yamamoto et al.
patent: 6042752 (2000-03-01), Mitsui
patent: 6252247 (2001-06-01), Sakata et al.
patent: 6356328 (2002-03-01), Shin et al.
patent: 6534183 (2003-03-01), Inoue
patent: 6646661 (2003-11-01), Lim et al.
patent: 6689477 (2004-02-01), Inoue
patent: 6911163 (2005-06-01), Abe et al.
patent: 2002/0061410 (2002-05-01), Sasaki et al.
patent: 2003/0148871 (2003-08-01), Inoue et al.
patent: 2003/0184688 (2003-10-01), Kim
patent: 2003/0218153 (2003-11-01), Abe
patent: 2004/0013899 (2004-01-01), Abe
patent: 2004/0070707 (2004-04-01), Lim et al.
patent: 2004/0081836 (2004-04-01), Inoue et al.
patent: 2004/0180217 (2004-09-01), Inoue et al.
patent: 2005/0094047 (2005-05-01), Kim
patent: 2005/0224766 (2005-10-01), Abe
patent: 59-204625 (1984-11-01), None
patent: 63-184726 (1988-07-01), None
patent: 01-289140 (1989-11-01), None
patent: 03-015107 (1991-01-01), None
patent: 04-253342 (1992-09-01), None
patent: 04-305627 (1992-10-01), None
patent: 06-187832 (1994-07-01), None
patent: 06-234565 (1994-08-01), None
patent: 07-045555 (1995-02-01), None
patent: 07-054133 (1995-02-01), None
patent: 07-054133 (1995-02-01), None
patent: 07-258826 (1995-10-01), None
patent: 07-301705 (1995-11-01), None
patent: 08-018058 (1996-01-01), None
patent: 09-123337 (1997-05-01), None
patent: 09-150477 (1997-06-01), None
patent: 10-065174 (1998-03-01), None
patent: 11-184195 (1999-07-01), None
patent: 11-253976 (1999-09-01), None
patent: 11-258625 (1999-09-01), None
patent: 11-264995 (1999-09-01), None
patent: 11-264996 (1999-09-01), None
patent: 11-266021 (1999-09-01), None
patent: 11-284195 (1999-10-01), None
patent: 2000-072526 (2000-03-01), None
patent: 2001-011613 (2001-01-01), None
patent: 2001-311954 (2001-11-01), None
patent: 2002-049058 (2002-02-01), None
patent: 2002-256424 (2002-09-01), None
patent: 2003-017706 (2003-01-01), None
patent: 2003-105532 (2003-04-01), None
patent: 2003-302647 (2003-10-01), None
patent: 2004-006221 (2004-01-01), None
patent: 2004-052102 (2004-02-01), None
patent: 2004-068054 (2004-03-01), None
patent: 2004-119272 (2004-04-01), None
patent: 2004-139780 (2004-05-01), None
patent: 2004-146136 (2004-05-01), None
patent: 2004-158315 (2004-06-01), None
patent: WO/03/014409 (2003-02-01), None
JP 2001-011613 machine translation. Obtained Jun. 2009.
English translation of JP 2004-068054—Published Mar. 4, 2004—Idemitsu Kosan Co Ltd.—“Sputtering Target, Sintered Compact and Electrically Conductive Film Produced by Utilizing Them”.
English translation of JP 2004-119272—Published Apr. 15, 2004—Idemitsu Kosan Co Ltd.—“Organic El Device and Substrate Used for lt”.
English translation of JP 2004-146136—Published May 20, 2004—Idemitsu Kosan Co Ltd.'—“Electrode Substrate for Organic Electroluminescent (EL) Element, and Its Manufacturing Method and Organic EL Device”.
English translation of JP 2004-139780—Published May 13, 2004—Idemitsu Kosan Co Ltd.—“Electrode Substrate for Organic Electroluminescent Device, Organic Electroluminescent Device, and Manufacturing Method of Its Device”.
English translation of JP 2004-158315—Published Jun. 3, 2004—Idemitsu Kosan Co Ltd.—“Electrode Substrate for Organic Electroluminescent Element, and Organic EL Light Emitting Device”.

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