Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-02-13
2008-08-05
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257SE29294, C257S059000, C257SE29291
Reexamination Certificate
active
07408198
ABSTRACT:
A thin film transistor (TFT) including a gate, a semiconductor layer, a source and a drain is provided. The gate has a control part, a connection part and a capacitance compensation part. The connection part is disposed between the control part and the capacitance compensation part for joining the two parts together. The semiconductor layer is disposed over the gate, the source and the drain are disposed on the semiconductor layer. An end of the drain overlaps the control part of the gate with a first region for composing a first parasitic capacitance; while another end of the drain overlaps the capacitance compensation part of the gate with a second region for composing a second parasitic capacitance. In a TFT array with the TFT, the sum of the first parasitic capacitance and the second parasitic capacitance is a constant.
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patent: 5877512 (1999-03-01), Kim
patent: 6825907 (2004-11-01), Hashiguchi et al.
patent: 2003/0081165 (2003-05-01), Chu et al.
patent: 2006/0290630 (2006-12-01), Kim et al.
patent: 2001-296553 (2001-10-01), None
Chunghwa Picture Tubes Ltd.
Ho Tu-Tu
Jianq Chyun IP Office
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