Thin film transistor, TFT substrate and liquid crystal...

Details Thin film transistor, TFT substrate and liquid crystal... Thin film transistor, TFT substrate and liquid crystal...

2006-09-12

2006-09-12

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S059000, C257SE31122, C349S044000

Reexamination Certificate

active

07105905

ABSTRACT:
A thin film transistor is provided including an active layer, in which a source region and drain region are formed, a first light-shielding film shielding a light incident on the active layer, and a second light-shielding film between the active layer and the first shielding film. A carrier concentration of at least surface portion of the second light-shielding film which opposes the active layer is about 1017/cm3or less.

REFERENCES:
patent: 6818921 (2004-11-01), Yasukawa
patent: 6912020 (2005-06-01), Kawata
patent: 2002/0071072 (2002-06-01), Ohtani et al.
patent: 2003/0025848 (2003-02-01), Sera et al.
patent: 11-84422 (1999-03-01), None
patent: 11-204587 (1999-07-01), None

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