Thin film transistor (TFT) device structure employing...

Details Thin film transistor (TFT) device structure employing... Thin film transistor (TFT) device structure employing...

2007-05-22

2007-05-22

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S646000, C257S059000, C257S395000, C257SE51005

Reexamination Certificate

active

10876010

ABSTRACT:
A thin film transistor device structure and a method for fabricating the thin film transistor device structure each comprise a thin film transistor device formed over a substrate. The thin film transistor device structure also comprises a passivation layer formed of a silicon rich silicon oxide material formed over the thin film transistor device. The passivation layer formed of the silicon rich silicon oxide material provides the thin film transistor device with enhanced performance.

REFERENCES:
patent: 5166816 (1992-11-01), Kaneko et al.
patent: 5648662 (1997-07-01), Zhang et al.
patent: 5763937 (1998-06-01), Jain et al.
patent: 6274429 (2001-08-01), Misra
patent: 6421108 (2002-07-01), Chen et al.

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