Thin film transistor (TFT) array substrate and fabricating...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Making emissive array

Reexamination Certificate

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C438S158000, C257S059000, C257SE21414, C257SE21158, C257SE33053, C257SE27100, C257SE27117, C257SE27147, C257S233000, C257S291000, C257S439000

Reexamination Certificate

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07960199

ABSTRACT:
A thin film transistor array substrate and a fabricating method thereof are disclosed. The thin film transistor array substrate protects a thin film transistor without a protective film and accordingly reduces the manufacturing cost. In the thin film transistor array substrate, a gate electrode is connected to a gate line. A source electrode is connected to a data line crossing the gate line to define a pixel area. A drain electrode is opposed to the source electrode with a channel therebetween. A semiconductor layer is in the channel. A pixel electrode in the pixel area contacts the drain electrode over substantially the entire overlapping area between the two. A channel protective film is provided on the semiconductor layer corresponding to the channel to protect the semiconductor layer.

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