Thin film transistor (TFT) and method of manufacturing thereof

Details Thin film transistor (TFT) and method of manufacturing thereof Thin film transistor (TFT) and method of manufacturing thereof

1995-02-22

1996-04-16

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 59, 257 66, 257401, H01L 2170, H01L 4500

Patent

active

055085318

ABSTRACT:
There is provided a TFT having a trench surrounding gate structure that is capable of decreasing the leakage current generated during the Off-State of the TFT by securing enough channel length despite the smallness of the area, increasing the driving current by securing a sufficient cross-sectional area of an inverted channel during the On-State of the TFT, and improving the resolution of the LCD by reducing the space occupied by the TFT in the panel during the manufacturing of the LCD.

REFERENCES:
patent: 5160491 (1992-11-01), Mori
patent: 5188973 (1993-02-01), Omura et al.
patent: 5229310 (1993-07-01), Sivan
patent: 5250450 (1993-10-01), Lee et al.

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