Thin film transistor (TFT) and method for fabricating the TFT

Details Thin film transistor (TFT) and method for fabricating the TFT Thin film transistor (TFT) and method for fabricating the TFT

2005-03-01

2005-03-01

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

C438S487000

Reexamination Certificate

active

06861668

ABSTRACT:
The present invention provides a simple method for forming the poly-Si and single crystalline Si TFT, which includes forming a line peninsular layer extending from an a-Si island layer at the active region. Then, a laser annealing process is performed, so that the re-crystallization will occur starting from an end of the line peninsular layer and then form the silicon island layer, serving as the active region for the TFT.

REFERENCES:
patent: 4269631 (1981-05-01), Anantha et al.

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