Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-04-13
2009-06-23
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000
Reexamination Certificate
active
07550766
ABSTRACT:
A Thin Film Transistor (TFT) that can reduce leakage current and can prevent crosstalk between adjacent TFTs includes: a substrate; a gate electrode disposed on the substrate; a source electrode and a drain electrode separated from each other and insulated from the gate electrode; and a semiconductor layer which is insulated from the gate electrode, contacts each of the source and drain electrodes, and has grooves that separate at least a region of the semiconductor layer between the source and drain electrodes from the adjacent TFT. Each groove passes at least a portion of the semiconductor layer corresponding to the source and drain electrodes, and a projection image generated when each groove that passes at least a portion of the semiconductor layer corresponding to the source and drain electrodes is projected onto the source and drain electrodes covers the source and drain electrodes except for a portion of the source electrode that faces the drain electrode and a portion of the drain electrode that faces the source electrode.
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An article “Patterning of poly(3-alkylthiophene) thin films by direct-write ultraviolet laser lithography” written by Wong et al., published in Materials Science and Engineering B, Elsevier Sequoia, Lausanna, CH, vol. 55, No. 1-2, pp. 71-78 on Aug. 14, 1998.
An article “Patterning pentacene organic thin film transistors” w ritten by Kymissis, et al., published in Journal of Vacuum Science and Technology B, Microelectronics and Nanometer Structures Processing, M easurement and Phenomena, American Institute of Physics, NY, vol. 20, No. 3, pp. 956-959 on May 3, 2002.
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Ahn Taek
Koo Jae-Bon
Suh Min-Chul
Bushnell , Esq. Robert E.
Ho Anthony
Jackson, Jr. Jerome
Samsung Mobile Display Co., Ltd.
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