Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-10-10
2008-11-04
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE29291, C257SE29294, C257SE21414, C349S043000, C349S141000
Reexamination Certificate
active
07446337
ABSTRACT:
A thin film transistor substrate structure for using a horizontal electric field includes a substrate; a gate line and a first common line formed on the substrate parallel to each other from a first conductive layer; a gate insulating film formed on the substrate, the gate line, and the first common line; a data line formed from a second conductive layer on the gate insulating film crossing the gate line and the common line with the gate insulating film therebetween to define a pixel area; a thin film transistor connected to the gate line and the data line; a protective film covering the data line and the thin film transistor; a common electrode formed from a third conductive layer connected to the common line through a hole passing through the protective film and the gate insulating film; and a pixel electrode formed from the second conductive layer connected to the thin film transistor to define a horizontal electric field between the pixel electrode and the common electrode.
REFERENCES:
patent: 6337726 (2002-01-01), Kawano et al.
patent: 6833893 (2004-12-01), Kikkawa
patent: 2003/0122990 (2003-07-01), Kim
patent: 2005/0046776 (2005-03-01), Ahn et al.
patent: 2005/0110931 (2005-05-01), Yoo et al.
patent: 10-2003-0057149 (2003-07-01), None
patent: 10-2003-0058511 (2003-07-01), None
Cho Heung Lyul
Kwon Oh Nam
Yoo Soon Sung
Ho Tu-Tu V
LG Display Co. Ltd.
Morgan Lewis & Bockuis LLP
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