Thin film transistor substrate of a horizontal electric...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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C438S128000

Reexamination Certificate

active

07129106

ABSTRACT:
A method of darkening a defective pixel including a short between a source electrode and a drain electrode in a thin film transistor substrate includes forming a gate line and a data line on a substrate to define a pixel region; forming a thin film transistor at a crossing of the gate line and the data line, the thin film transistor having a gate electrode, a source electrode and a drain electrode; forming a pixel electrode and a common electrode in the pixel region; forming a common line provided in parallel to the gate line and connected to the common electrode; forming an extended part of the drain electrode in parallel to the gate line; and cutting the extended part along a cutting line.

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patent: P2001-154636 (2001-06-01), None

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