Thin film transistor substrate for liquid crystal display...

Liquid crystal cells – elements and systems – Particular excitation of liquid crystal – Electrical excitation of liquid crystal

Reexamination Certificate

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Details

C257S072000, C438S030000

Reexamination Certificate

active

06940568

ABSTRACT:
Disclosed is a thin film transistor substrate for LCD, for preventing the increase of failed pixels due to opening of gate line by when opening of gate line occurs, allowing black matrix to perform the function of the gate line on behalf of the opened gate line. The substrate includes: black matrix arranged between adjacent unit pixels on transparent insulating substrate; first oxide film formed on black matrix; active polysilicon layer pattern formed at active region; second oxide film formed on resultant substrate including active polysilicon layer pattern, and including first contact hole exposing predetermined portion of black matrix; gate line formed on selected area of second oxide film and electrically contacting with black matrix through first contact hole; third oxide film formed on resultant substrate; data line formed on third oxide film; planarizing film formed on third oxide film including data line; and pixel electrode formed on planarizing film.

REFERENCES:
patent: 5615030 (1997-03-01), Harada et al.
patent: 6559914 (2003-05-01), Jones et al.
patent: 3148636 (1991-06-01), None
patent: 8136931 (1996-05-01), None

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