Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-04-17
2007-04-17
Le, Thao X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S071000, C257SE29273, C438S149000, C438S155000, C349S043000, C435S092000
Reexamination Certificate
active
10963599
ABSTRACT:
A thin film transistor (TFT) substrate is fabricated in three mask processes. In a first mask process, a gate line and a gate electrode are formed. In a second mask process, a data line, a source electrode, a drain electrode, a semiconductor layer, and a first upper storage electrode overlapping the gate line are formed from a gate insulating film, undoped and doped amorphous silicon layers, and a data metal layer. In a third mask process, a pixel hole is formed through protective and gate insulating films within and outside a pixel area, the first upper storage electrode is partially removed, a pixel electrode contacts a side of the drain electrode within the pixel hole at the pixel area, and a second upper storage electrode contacts a side of the first upper storage electrode in the pixel hole outside the pixel area.
REFERENCES:
patent: 2002/0008798 (2002-01-01), Song et al.
patent: 2003/0197182 (2003-10-01), Kim et al.
patent: 2004/0263722 (2004-12-01), Oh et al.
patent: 2005/0077522 (2005-04-01), Chang et al.
Ahn Byung Chul
Cho Heung Lyul
Yoo Soon Sung
Kalam Abul
Le Thao X.
LG.Philips LCD Co. , Ltd.
McKenna Long & Aldridge LLP
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