Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-06-20
2006-06-20
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S071000
Reexamination Certificate
active
07064347
ABSTRACT:
A thin film transistor substrate for a display device includes a gate line; a gate insulating film disposed over the gate line; a data line disposed on the gate insulating film intersecting with the gate line to define a pixel area; a thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode, and a channel between the source electrode and the drain electrode; a protective film disposed covering the gate line, the data line, and the thin film transistor; a pixel electrode connected to the drain electrode of the thin film transistor; and a storage capacitor having a first upper storage electrode connected to the pixel electrode, and a second upper storage electrode connected to the first upper storage electrode on a side surface basis via a first contact hole passing through the protective film and the first upper storage electrode at an overlapping portion of the gate line and the first upper storage electrode.
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Chang Youn Gyoung
Cho Heung Lyul
Lee Eugene
LG.Philips LCD Co. , Ltd.
Morgan & Lewis & Bockius, LLP
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