Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-11-06
2007-11-06
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S066000, C257S069000
Reexamination Certificate
active
11385077
ABSTRACT:
A method for producing a thin film transistor substrate includes the steps of: (i) depositing an amorphous semiconductor film on a transparent insulating substrate; (ii) patterning the amorphous semiconductor film so as to form insular amorphous semiconductor films, the step (ii) including a process (I) for forming, in respective stripe areas each of which is elongate in a first direction in a display area, a plurality of insular semiconductor films whose channel length is in line with the first direction, and a process (II) for forming, in an area including extended portions of the striped areas in a peripheral circuit area, a plurality of insular semiconductor films; (iii) polycrystallizing the insular semiconductor films in the peripheral circuit area so that the insular semiconductor films have high mobility in a second direction and polycrystallizing the insular semiconductor films in the display area so that the insular semiconductor films have high mobility in the first direction; and (iv) forming TFTs by using polycrystalline insular semiconductor films. In at least one peripheral circuit, a channel of a high speed TFT is positioned on a portion other than the extended portions of the stripe areas.
REFERENCES:
patent: 5789763 (1998-08-01), Kato et al.
patent: 6479837 (2002-11-01), Ogawa et al.
patent: 6737672 (2004-05-01), Hara et al.
patent: 10-229202 (1998-08-01), None
patent: 10-229202 (1998-08-01), None
patent: 2000-243970 (2000-09-01), None
patent: 2003-086505 (2003-03-01), None
Hirano Takuya
Hotta Kazushige
Keating & Bennett LLP
Patton Paul E
Sharp Kabushiki Kaisha
Smith Zandra V.
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