Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-05-01
2007-05-01
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S762000
Reexamination Certificate
active
10539223
ABSTRACT:
The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring method thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.
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Patent Abstracts of Japan, Publication No. 2000-330134, Nov. 30, 2000.
Cho Beom-Seok
Jeong Chang-Oh
Lee Jae-Gab
Sung Myung-Mo
Yang Hee-Jung
Crane Sara
Kwok Edward C.
MacPherson Kwok & Chen & Heid LLP
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