Thin film transistor substrate and manufacturing method thereof

Details Thin film transistor substrate and manufacturing method thereof Thin film transistor substrate and manufacturing method thereof

2007-07-17

2007-07-17

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

C257S784000, C257SE23021

Reexamination Certificate

active

10878084

ABSTRACT:
A thin film transistor (TFT) substrate includes a glass substrate, a thin film transistor, an electrode pad, and a conductive bump. The TFT and the electrode pad are formed on the glass substrate, and the electrode pad is used for electrically connecting with the thin film transistor. The conductive bump includes several insulating bumps and a conductive layer. The insulating bumps are formed on the electrode pad dividedly, and the conductive layer covers the top surfaces of the insulating bumps, the inward surfaces of the insulating bumps, and the electrode pad between the insulating bumps for electrically connecting with the electrode pad. The outward side surfaces of the insulating bumps are exposed out of the conductive layer.

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