Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide
Reexamination Certificate
2005-02-08
2005-02-08
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is an oxide of a metal or copper sulfide
C257S059000, C257S072000
Reexamination Certificate
active
06852998
ABSTRACT:
A source line is directly connected to a source terminal composed of indium zinc oxide in a thin-film transistor substrate. A gate line is directly connected to a gate terminal composed of indium zinc oxide. Alternatively, drain electrodes of thin-film transistors for switching a plurality of pixel electrodes are directly connected to pixel electrodes composed of indium zinc oxide. These configurations do not require a passivation film which is essential for conventional thin-film transistor substrates, and the resulting thin-film transistor substrate can be made by a reduced number of manufacturing steps.
REFERENCES:
patent: 6444296 (2002-09-01), Sasaki et al.
patent: 2000-77806 (2000-03-01), None
Arai Kazuyuki
Chul Jo Gyoo
Sasaki Makoto
Sung Chae Gee
Brinks Hofer Gilson & Lione
Flynn Nathan J.
LG Philips LCD Co., Ltd.
Sefer Ahmed N.
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