Thin film transistor substrate

Details Thin film transistor substrate Thin film transistor substrate

2007-12-31

2010-12-14

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S072000, C257S347000, C257SE27060, C257SE27155

Reexamination Certificate

active

07851799

ABSTRACT:
A thin film transistor (TFT) substrate includes: a plurality of gate wirings; a plurality of data wirings insulatedly crossing the gate wirings to define a plurality of pixels; a plurality of common voltage lines formed along edges of pixels and mutually connected in an extending direction of the gate wirings; and a plurality of common electrodes formed at the pixel such that the plurality of common electrodes partially overlap with the common voltage line and mutually connected in an extending direction of the data wirings. A uniform common voltage can be stably applied on the entire surface of the TFT substrate.

REFERENCES:
patent: 6256076 (2001-07-01), Bae et al.
patent: 7023017 (2006-04-01), Ahn et al.
patent: 7556988 (2009-07-01), Ahn et al.
patent: 2006/0231838 (2006-10-01), Kim
patent: 1614487 (2005-11-01), None

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