Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-10-25
2005-10-25
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S347000
Reexamination Certificate
active
06958492
ABSTRACT:
A thin film transistor structure for a field emission display is disclosed, which has a substrate; a patterned poly-silicon layer having a source area, a drain area, and a channel on the substrate; a patterned first gate metal layer; a first gate-insulating layer sandwiched in between the poly-silicon layer and the first gate metal layer; a patterned second gate metal layer; and a second gate-insulating layer sandwiched in between the poly-silicon layer and the second gate metal layer; wherein the thickness of the second insulating layer is greater than that of the first gate-insulating layer, and the absolute voltage in the channel under the first gate metal layer is less than that under the second gate metal layer when a voltage higher than the threshold voltage thereof is applied to both of the first gate metal layer and the second gate metal layer.
REFERENCES:
patent: 5572040 (1996-11-01), Reedy et al.
patent: 6188111 (2001-02-01), Kumagai
patent: 6251733 (2001-06-01), Yamazaki
Chen Chen-Ming
Chen Cheng-Chung
Huang Chun-Yao
Tseng Huai-Yuan
Wang Yu-Wu
Bacon & Thomas PLLC
Cao Phat X.
Doan Theresa T.
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