Thin film transistor structure

Details Thin film transistor structure Thin film transistor structure

2006-02-14

2006-02-14

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S072000

Reexamination Certificate

active

06998640

ABSTRACT:
The invention provides a method of manufacturing a thin film transistor capable of reducing the induced photo-electric current and thus improving the quality of the liquid crystal display, and reducing the number of required photo masks saving on the cost of fabrication. A stack structure is formed first, by successively depositing a gate electrode, a first insulation layer, a semiconductor layer, an ohmic contact layer, and a photoresist layer. Subsequently, a second insulation layer is deposited on the substrate, and the photoresist layer and the second insulation layer on the photoresist layer are removed in a lift-off process. Last, a source electrode, a drain electrode, a passivation layer, and a transparent electrode layer, are formed to complete the thin film transistor process.

REFERENCES:
patent: 5883682 (1999-03-01), Kim et al.
patent: 6825497 (2004-11-01), Lai
patent: 2004/0063254 (2004-04-01), Wang et al.

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