Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-03-21
2006-03-21
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C349S043000
Reexamination Certificate
active
07015508
ABSTRACT:
The present invention improves the quality of the TFT structure by avoiding photo-induced current, and lowers manufacturing costs by decreasing the number of masks required in the process, wherein the former is achieved by the stacked structure including a gate layer, an insulation layer, an amorphous silicon layer and an ohmic contact layer, and the latter is achieved by using the stacked structure as a mask and by exposing the substrate from the back surface.
REFERENCES:
patent: 5485038 (1996-01-01), Licari et al.
patent: 5998230 (1999-12-01), Gee-Sung et al.
patent: 2002/0190253 (2002-12-01), Tsujimura et al.
patent: 06-084946 (1994-03-01), None
Chi Mei Optoelectronics Corp.
Thomas Kayden Horstemeyer & Risley
Weiss Howard
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