Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-04-05
2011-11-08
Richards, N Drew (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S067000, C257S068000, C257S069000, C257S202000, C257S204000, C438S151000, C438S155000, C438S164000, C438S405000, C438S455000
Reexamination Certificate
active
08053779
ABSTRACT:
Provided are a thin film transistor (TFT) panel, a method of fabricating the same, and an organic light emitting display device (OLED) including the same. The TFT panel has a TFT region and a capacitor region. A TFT is formed in the TFT region and a capacitor is formed in the capacitor region. The TFT includes an active layer that includes a source and a drain regions. A gate insulation layer is formed on the active layer, and a gate electrode is formed on the gate insulation layer over the active layer. A source and a drain electrodes are formed over the active layer, and connected to the source and drain regions, respectively. In the TFT region, an interlayer insulation layer is formed between the gate electrode and the source/drain electrodes. In the capacitor region, an interlayer insulation layer is formed between a capacitor lower electrode and a capacitor upper electrode to form a capacitor. The interlayer insulation layers of the TFT region and the capacitor region have different layer structures and have different dielectric constants. Therefore, the capacitor region can have higher capacitance while the TFT region can have lower capacitance to reduce parasitic capacitance.
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The Decision of Grantfrom the Korean Intellectual Property Office issued in Applicant's corresponding Korean Patent Application N. 2006-31134 dated Sep. 6, 2007.
Korean Office Action, issued by the Korean Intellectual Property Office on Mar. 27, 2007, in Applicant's corresponding Korean patent application No. 10-2006-0031134.
Choi Jong-Hyun
Im Choong-Youl
Jun Woo-Sik
Kwon Do-Hyun
Yoo Kyung-Jin
Bushnell , Esq. Robert E.
Garcia Joannie A
Richards N Drew
Samsung Mobile Display Co., Ltd.
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