Thin film transistor, organic light emitting display device...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

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Details

C257S072000, C257S083000, C257S257000, C257S290000, C257SE31083

Reexamination Certificate

active

07928439

ABSTRACT:
A thin film transistor (TFT) may include a substrate, a gate electrode on the substrate, a gate insulating layer on the gate electrode, and a semiconductor layer on the gate insulating layer. The semiconductor layer may include a top surface, a channel area aligned in a vertical direction with the gate electrode, a plurality of doped areas proximate to the channel area, and a plurality of non-doped areas. Source and drain electrodes may be on the top surface of the semiconductor layer aligned above respective ones of the plurality of non-doped areas of the semiconductor layer. A planarization layer may be on the gate insulating layer, the source and drain electrodes and the semiconductor layer channel area, and may include a plurality of openings respectively exposing the plurality of doped areas of the semiconductor layer and a portion of the source electrode and the drain electrode.

REFERENCES:
patent: 5920082 (1999-07-01), Kitazawa et al.
patent: 6713825 (2004-03-01), Hwang
patent: 6998641 (2006-02-01), Makita et al.
patent: 2004/0018669 (2004-01-01), Song
patent: 2006/0050190 (2006-03-01), Song
patent: 2007/0045556 (2007-03-01), Watanabe et al.
patent: 2008/0315201 (2008-12-01), Ohmi et al.
patent: 2003-017500 (2003-01-01), None
patent: 10-1997-0022459 (1997-05-01), None
patent: 10-2003-0057074 (2003-07-01), None

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