Thin film transistor of liquid crystal display with amorphous si

Details Thin film transistor of liquid crystal display with amorphous si Thin film transistor of liquid crystal display with amorphous si

1998-06-26

2000-12-26

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 59, 257 57, 257 72, 257 63, H01L 310312, H01L 29786

Patent

active

061664006

ABSTRACT:
In thin film transistor, an amorphous diamond is used as an ohmic layer formed between an active layer and a source and drain electrodes. Specifically, in a inverse staggered type thin film transistor, a gate electrode and a gate insulating layer are formed on an insulating substrate. On the gate insulating layer is formed an active layer. An etch stopper is formed on the active layer, overlapping with the gate electrode. Thereafter, an amorphous diamond is overlappingly formed on the gate electrode on a resultant structure and then a metal layer is formed on the resultant in which the ohmic layer is formed. The metal layer and the amorphous diamond layer is patterned until the etch stopper is exposed, forming the ohmic layer and a source electrode and a drain electrode.

REFERENCES:
patent: 5474816 (1995-12-01), Falabella
patent: 5633513 (1997-05-01), Koyama

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