Thin film transistor of active matrix liquid crystal display

Details Thin film transistor of active matrix liquid crystal display Thin film transistor of active matrix liquid crystal display

1989-12-28

1991-10-22

Mintel, William

Optical: systems and elements

Prism

With reflecting surface

357 4, 357 49, 359 59, H01L 2701

Patent

active

050600362

ABSTRACT:
A thin film transistor of active matrix LCD comprising amorphous silicon layer formed on gate insulating layer and doped with phosphorous or boron, and insulating layer having two laminated structure and SiN layer formed between said two amorphous silicon layers so as to enhance characteristics of the TFT and protect short circuit in the cross points between the gate and source electrodes.

REFERENCES:
patent: 4876582 (1989-10-01), Janning
patent: 4979006 (1990-12-01), Tanaka et al.
"Charge Trapping Instabilities in Amorphous Silicon-Silicon Nitride Thin Film Transistors" M. J. Powell, pp. 597-599, Appl. Phys. Lett. 43(8), Sep. 15, 1983.

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