Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-04-12
2005-04-12
Wilson, Allan R. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S057000, C257S072000, C257S347000, C438S149000, C349S042000, C349S046000
Reexamination Certificate
active
06878967
ABSTRACT:
The invention intends to provide a TFT having a gate insulating film which has a high dielectric withstand voltage and can ensure a desired carrier mobility in an adjacent semiconductor active film. A gate electrode and a semiconductor active film are formed on a transparent substrate with a gate insulating film, which is formed of two layered insulating films, held between them. The gate insulating film is made up of a first gate insulating film which improves a withstand voltage between the gate electrode and the semiconductor active film, and a second gate insulating film which improves an interface characteristic between the gate insulating film and the semiconductor active film. The first and second gate insulating films are each formed of a SiNxfilm. The optical band gap of the first gate insulating film has a value in the range of 3.0 to 4.5 eV, and the optical band gap of the second gate insulating film has a value in the range of 5.0 to 5.3 eV.
REFERENCES:
patent: 6245202 (2001-06-01), Edamura et al.
patent: 6287943 (2001-09-01), Fujioka et al.
patent: 6380612 (2002-04-01), Jang et al.
patent: 6642091 (2003-11-01), Tanabe
Brinks Hofer Gilson & Lione
LG Philips LCD Co., Ltd.
Ortiz Edgardo
Wilson Allan R.
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