Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide
Reexamination Certificate
2011-08-30
2011-08-30
Tran, Minhloan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is an oxide of a metal or copper sulfide
C257SE29296, C438S104000
Reexamination Certificate
active
08008658
ABSTRACT:
A thin film transistor (TFT) using an oxide semiconductor layer as an active layer, a method of manufacturing the TFT, and a flat panel display (FPD) including the TFT are taught. The TFT includes a gate electrode formed on a substrate, an oxide semiconductor layer electrically insulated from the gate electrode by a gate insulating layer, and the oxide semiconductor layer including a channel region, a source region, and a drain region, and a source electrode and a drain electrode respectively electrically contacting the source region and the drain region. The oxide semiconductor layer is formed of an InZnO or IZO layer (indium zinc oxide layer) including Zr. The carrier density of the IZO layer is controlled to be 1×1013to 1×1018#cm−3by controlling an amount of Zr.
REFERENCES:
patent: 7101813 (2006-09-01), Ahn
patent: 2007/0108446 (2007-05-01), Akimoto
patent: 2008/0308826 (2008-12-01), Lee et al.
patent: 2006-098480 (2006-04-01), None
patent: 2007-201366 (2007-08-01), None
patent: 2007-250982 (2007-09-01), None
Korean Office Action issued by Korean Patent Office on May 25, 2010 corresponding to Korean Patent Application No. 10-2008-0011492 and Request for Entry of the Accompanying Office Action attached herewith.
Transmitter letter and Korean Office action issued by Korean Patent Office on Nov. 23, 2009 corresponding to Korean Patent Application No. 10-2008-0011492 with English abstract attached.
Jeong Jae-Kyeong
Jeong Jong-han
Kim Kwang-Suk
Mo Steve Y. G.
Park Jin-seong
Bushnell , Esq. Robert E.
Samsung Mobile Display Co., Ltd.
Tran Minhloan T
LandOfFree
Thin film transistor, method of manufacturing the same, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor, method of manufacturing the same, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor, method of manufacturing the same, and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2732252