Active solid-state devices (e.g. – transistors – solid-state diode – Semiconductor is an oxide of a metal or copper sulfide
Reexamination Certificate
2011-08-09
2011-08-09
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Semiconductor is an oxide of a metal or copper sulfide
C257S258000, C257S646000, C257SE29094, C257SE21276
Reexamination Certificate
active
07994500
ABSTRACT:
A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.
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Ahn Tae-Kyung
Chung Hyun-Joong
Jeong Jae-Kyeong
Jeong Jong-han
Kim Kwang-Suk
H.C. Park & Associates PLC
Pham Long
Samsung Mobile Display Co., Ltd.
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