Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-10-07
1998-06-16
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 66, 257408, 349 46, H01L 2904, H01L 310368, H01L 29786
Patent
active
057675317
ABSTRACT:
A thin-film transistor includes a semiconductor layer having a source region and a drain region, a gate insulating film formed on the semiconductor layer, and a gate electrode formed on the gate insulating film, wherein a portion of the gate insulating film disposed above a portion of the semiconductor layer sandwiched by the source region and the drain region includes of a first portion with a first thickness and a second portion with a second thickness which is different from the first thickness.
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Catalano, et al, PCT Published Application No. WO 89/09494, Oct., 1989.
J. G. Fossum "Anomalous Leakage Current in LPCVD Polysilicon MOSFET's", IEEE, Transactions on Election Devices, vol. ED-32, No. 9, Sep. 1995, pp. 1878-1885.
Conlin David G.
Guay John
Jackson Jerome
Neuner George W.
Sharp Kabushiki Kaisha
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