Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-08-16
2011-08-16
Lebentritt, Michael S (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257SE29273, C257SE29292, C257SE29294
Reexamination Certificate
active
07999262
ABSTRACT:
A thin film transistor includes a gate electrode, a gate insulation layer on the gate electrode, source and drain electrodes formed on the gate insulation layer, a polysilicon channel layer overlapping the ohmic contact layers and on the gate insulation layer between the source and drain electrodes, ohmic contact regions over the source and drain electrodes for contacting the polysilicon channel to the source and drain electrodes, and doping layers over the source and drain electrodes.
REFERENCES:
patent: 5681760 (1997-10-01), Park
patent: 5827760 (1998-10-01), Seo
patent: 6083779 (2000-07-01), Seo
patent: 6514801 (2003-02-01), Yudasaka et al.
patent: 6580127 (2003-06-01), Andry et al.
patent: 7361529 (2008-04-01), Chabinyc et al.
Cha Seung Hwan
Chae Gee Sung
Lebentritt Michael S
LG Display Co. Ltd.
Morgan & Lewis & Bockius, LLP
Whalen Daniel
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