Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-08-16
2011-08-16
Stark, Jarrett J (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S288000, C257S377000, C257SE29294
Reexamination Certificate
active
07999261
ABSTRACT:
A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT, the TFT including a substrate, a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrode, a semiconductor layer disposed on the gate insulating layer and crystallized using a metal catalyst, and source and drain electrodes disposed on the semiconductor layer and electrically connected to source and drain regions of the semiconductor layer. A second metal is diffused into a surface region of the semiconductor layer, to getter the metal catalyst from a channel region of the semiconductor layer. The second metal can have a lower diffusion coefficient in silicon than the metal catalyst.
REFERENCES:
patent: 6855954 (2005-02-01), Zhang
patent: 2004/0263706 (2004-12-01), Cho et al.
patent: 2006/0071211 (2006-04-01), Lee
patent: 2008/0315207 (2008-12-01), Yang et al.
patent: 1761074 (2006-04-01), None
patent: 2001-119029 (2001-04-01), None
patent: 2003-051600 (2003-02-01), None
patent: 2001-98463 (2001-11-01), None
patent: 2002-62276 (2002-07-01), None
patent: 2005-2563 (2005-01-01), None
patent: 10-2005-0113036 (2005-12-01), None
patent: 10-2006-0015196 (2006-02-01), None
patent: 2007-76116 (2007-07-01), None
patent: WO 02/01603 (2002-01-01), None
Ahn Ji-Su
Kim Sung-Chul
Lee Ki-Yong
Lee Kil-won
Park Byoung-Keon
H.C. Park & Associates PLC
Samsung Mobile Display Co., Ltd.
Stark Jarrett J
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