Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2008-06-27
2011-10-25
Brewster, William M. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S072000
Reexamination Certificate
active
08044401
ABSTRACT:
A thin film transistor includes a substrate, a semiconductor layer disposed on the substrate, including a channel region and source and drain regions and crystallized using a metal catalyst, a gate electrode disposed to correspond to a predetermined region of the semiconductor layer, a gate insulating layer disposed between the gate electrode and the semiconductor layer to insulate the semiconductor layer from the gate electrode, and source and drain electrodes electrically connected to the source and drain regions of the semiconductor layer, respectively. The metal catalyst within 150 Å from a surface of the semiconductor layer in a vertical direction is formed to have a concentration exceeding 0 and not exceeding 6.5×E17atoms per cm3in the channel region of the semiconductor layer. An organic light emitting diode (OLED) display device includes the thin film transistor.
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Lee Ki-Yong
Lee Kil-Won
Park Byoung-Keon
Seo Jin-Wook
Yang Tae-Hoon
Brewster William M.
H.C. Park & Associates PLC
Samsung Mobile Display Co., Ltd.
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