Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material forms active...
Reexamination Certificate
2007-10-30
2007-10-30
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material forms active...
C257S052000, C257S057000, C257S059000, C257S064000, C257S066000, C257S069000, C257S070000, C257S072000, C257S073000
Reexamination Certificate
active
11428477
ABSTRACT:
The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin film with a crystal grown in a horizontal direction, the thin-film transistor having a gate insulating film and a gate electrode over the channel region, wherein a drain edge of the drain region which is adjacent to the channel region is formed in the vicinity of a crystal growth end position.
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Kawachi Genshiro
Matsumura Masakiyo
Nakazaki Yoshiaki
Warabisako Terunori
Advanced LCD Technologies Development Center Co. Ltd.
Soward Ida M.
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