Thin-film transistor, method for manufacturing thin-film...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material forms active...

Reexamination Certificate

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Details

C257S052000, C257S057000, C257S059000, C257S064000, C257S066000, C257S069000, C257S070000, C257S072000, C257S073000

Reexamination Certificate

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11428477

ABSTRACT:
The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin film with a crystal grown in a horizontal direction, the thin-film transistor having a gate insulating film and a gate electrode over the channel region, wherein a drain edge of the drain region which is adjacent to the channel region is formed in the vicinity of a crystal growth end position.

REFERENCES:
patent: 5759879 (1998-06-01), Iwasaki
patent: 6482684 (2002-11-01), Yamazaki
patent: 6737673 (2004-05-01), Yamazaki
patent: 2002/0058399 (2002-05-01), Sato et al.
patent: 2005/0104125 (2005-05-01), Sato et al.
patent: 1 047 119 (2000-10-01), None
patent: 2002-83768 (2002-03-01), None
patent: 2002-83769 (2002-03-01), None
Masakiyo Matsumura, “Preparation of Ultra-Large Grain Silicon Thin-Films by Excimer-Laser”, Journal of the Surface Science Society of Japan, vol. 21, No. 5, May 2000, pp. 278-287.
Masakiyo Matsumura, “Method of Forming Large Crystal Grain Si Film by Excimer Laser Light Irradiation”, Applied Physics, vol. 71, No. 5, 2000, pp. 543-547.

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