Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2010-02-01
2011-11-22
Parker, Kenneth (Department: 2815)
Semiconductor device manufacturing: process
Having organic semiconductive component
C257S040000, C257SE51001
Reexamination Certificate
active
08062924
ABSTRACT:
A method for fabricating a TFT on a substrate includes forming a gate electrode; forming a semiconductor layer insulated from the gate electrode and partially overlapped with the gate electrode; forming a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer including a sol-gel compound; and forming source and drain electrodes at both sides of the semiconductor layer.
REFERENCES:
patent: 7253017 (2007-08-01), Roscheisen et al.
patent: 2003/0059984 (2003-03-01), Sirringhaus et al.
patent: 2006/0138404 (2006-06-01), Okada et al.
patent: 2006/0232735 (2006-10-01), Hokazono et al.
patent: 2007/0104878 (2007-05-01), Kodas et al.
patent: 2007/0117271 (2007-05-01), Kodas et al.
patent: 2007/0178232 (2007-08-01), Kodas et al.
patent: 2003-177682 (2003-06-01), None
patent: 2003-218361 (2003-07-01), None
patent: 2006-135327 (2006-05-01), None
patent: 588473 (2004-05-01), None
patent: 236173 (2005-07-01), None
patent: 249857 (2006-02-01), None
Chae Gee Sung
Heo Jae Seok
Jun Woong Gi
Ho Anthony
LG Display Co. Ltd.
McKenna Long & Aldridge LLP
Parker Kenneth
LandOfFree
Thin film transistor, method for fabricating the same and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor, method for fabricating the same and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor, method for fabricating the same and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4290493