Thin film transistor memory device

Details Thin film transistor memory device Thin film transistor memory device

2007-01-09

2007-01-09

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185260, C365S185140

Reexamination Certificate

active

10985762

ABSTRACT:
A memory device includes a memory array of thin film transistor (TFT) memory cells. The memory cells include a floating gate separated from a gate electrode portion of a gate line by an insulator. The gate electrode portion includes a diffusive conductor that diffuses through the insulator under the application of a write voltage. The diffusive conductor forms a conductive path through the insulator that couples the gate line to the floating gate, changing the gate capacitance and therefore the state of the memory cell. The states of the memory cells are detectable as the differing current values for the memory cells. The memory cells are three terminal devices, and read currents do not pass through the conductive paths in the memory cells during read operations. This renders the memory cells robust, because read currents will not interfere with the storage mechanism in the memory cells. The memory array can be fabricated using multiple steps using the same mask. The use of a single mask for multiple steps reduces the time and cost involved in fabricating the memory array.

REFERENCES:
patent: 4203158 (1980-05-01), Frohman-Bentchkowsky et al.
patent: 4866493 (1989-09-01), Arima et al.
patent: 4939559 (1990-07-01), DiMaria et al.
patent: 5276344 (1994-01-01), Arima et al.
patent: 5360981 (1994-11-01), Owen et al.
patent: 5517044 (1996-05-01), Koyama
patent: 5644528 (1997-07-01), Kojima
patent: 5787042 (1998-07-01), Morgan
patent: 5817550 (1998-10-01), Carey et al.
patent: 5818083 (1998-10-01), Ito
patent: 5912840 (1999-06-01), Gonzalez et al.
patent: 5981404 (1999-11-01), Sheng et al.
patent: 6005270 (1999-12-01), Noguchi
patent: 6143582 (2000-11-01), Vu et al.
patent: 6150688 (2000-11-01), Maeda et al.
patent: 6177706 (2001-01-01), Shindo et al.
patent: 6222756 (2001-04-01), Lee
patent: 6225668 (2001-05-01), Shindo et al.
patent: 6226201 (2001-05-01), Madurawe et al.
patent: 6229186 (2001-05-01), Ishida
patent: 6242770 (2001-06-01), Bronner et al.
patent: 6420752 (2002-07-01), Ngo et al.
patent: 6426895 (2002-07-01), Kosaka et al.
patent: 6864529 (2005-03-01), Mei et al.
patent: 2003/0045037 (2003-03-01), Mei et al.

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