Thin film transistor, matrix substrate, electrophoresis...

Details Thin film transistor, matrix substrate, electrophoresis... Thin film transistor, matrix substrate, electrophoresis...

2009-01-20

2011-11-01

Louie, Wai Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S249000, C257S331000, C257S365000, C257SE21638, C438S283000

Reexamination Certificate

active

08049210

ABSTRACT:
Provided is a thin film transistor including a substrate, a source electrode and a drain electrode disposed above the substrate so as to oppose each other, an organic semiconductor film disposed between the source electrode and the drain electrode to generate a channel region, and a gate electrode disposed opposite the organic semiconductor film via a gate insulating film. The gate electrode includes an aperture in the channel region.

REFERENCES:
patent: 6930331 (2005-08-01), Park et al.
patent: 2005/0082573 (2005-04-01), Williford
patent: 2007/0242180 (2007-10-01), Choi et al.
patent: 2005-302888 (2005-10-01), None
Takashi Minakata, “Yuki Toranjisuta no Hyoka to Oyo (Evaluation and Application of Organic Transistor)”, Chapter 1, pp. 27-33, CMC Publishing Co., Ltd., Japan.

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