Thin-film transistor matrix for liquid crystal display

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357 17, 357 45, 350335, 350336, 350339R, 350342, H01L 2978

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active

048168858

ABSTRACT:
A thin-film transistor matrix comprises thin-film transistors formed on a dielectric substrate and arranged in rows and columns. Each of the transistors comprises a control electrode, an insulation film formed on the control electrode, a semiconductor film formed on the insulation film, a first main electrode formed on the semiconductor film, and a second main electrode formed on the semiconductor film. Row interconnection layers are provided for the respective rows to interconnect the control electrodes of the transistors of the respective rows. Column interconnection layers are provided for the respective columns to interconnect the first main electrodes in the respective columns. The insulation film and the semiconductor film are formed in the regions where the transistor is formed and in the regions where the column interconnection layer is formed.

REFERENCES:
patent: 3493812 (1970-02-01), Weimer
patent: 3974515 (1976-08-01), Ipri et al.
patent: 4431271 (1984-02-01), Okubo
patent: 4582395 (1986-04-01), Morozumi
patent: 4697331 (1987-10-01), Bouzitrop et al.
patent: 4704002 (1987-11-01), Kikuchi et al.
Yamano et al., Journal of the Television Institute of Japan, vol. 38, No. 4, (1984), pp. 336-370, "a-Si TFT Active-Matrix Full Color LC TV".

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