Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2011-05-24
2011-05-24
Nguyen, Khiem D (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE51005
Reexamination Certificate
active
07947982
ABSTRACT:
A thin film transistor matrix device including an insulating substrate, a plurality of thin film transistors (TFTs) on the insulating substrate, and a plurality of picture element electrodes (connected to the TFTs) on the insulating substrate in a matrix to define an image display region. A first conductor is on the insulating substrate. A first insulating film is on the first conductor, a second conductor is on the first insulating film, and a second insulating film is over the first insulating film and the second conductor. A first contact hole is formed in the first and second insulating films, a second contact hole is formed in the second insulating film, and a conducting connection is formed between the first and second contact holes. The first and second conductors are connected to the conducting connection via the first and second contact holes, respectively, which are both outside the image display region.
REFERENCES:
patent: 4789889 (1988-12-01), Morris et al.
patent: 5012228 (1991-04-01), Masuda et al.
patent: 5162933 (1992-11-01), Kakuda et al.
patent: 5182661 (1993-01-01), Ikeda et al.
patent: 5247375 (1993-09-01), Mochizuki et al.
patent: 5250931 (1993-10-01), Misawa et al.
patent: 5311342 (1994-05-01), Watanabe
patent: 5335102 (1994-08-01), Kanemori et al.
patent: 5341012 (1994-08-01), Misawa et al.
patent: 5467210 (1995-11-01), Kishigami
patent: 5473261 (1995-12-01), Marumoto et al.
patent: 5483082 (1996-01-01), Takizawa et al.
patent: 5504348 (1996-04-01), Yoshida et al.
patent: 5548425 (1996-08-01), Adachi et al.
patent: 5576868 (1996-11-01), Togashi
patent: 5585951 (1996-12-01), Noda et al.
patent: 5608251 (1997-03-01), Konuma et al.
patent: 5608558 (1997-03-01), Katsumi
patent: 5621556 (1997-04-01), Fulks et al.
patent: 5646432 (1997-07-01), Iwaki et al.
patent: 5668032 (1997-09-01), Holmberg et al.
patent: 5670792 (1997-09-01), Utsugi et al.
patent: 5703668 (1997-12-01), Shin
patent: 5719408 (1998-02-01), Yamamoto et al.
patent: 5784133 (1998-07-01), Kim et al.
patent: 5852480 (1998-12-01), Yajima et al.
patent: 5900646 (1999-05-01), Takizawa et al.
patent: 6075580 (2000-06-01), Kouchi
patent: 6515300 (2003-02-01), den Boer et al.
patent: 7075108 (2006-07-01), Takizawa et al.
patent: H02-8817 (1990-01-01), None
patent: H02-244126 (1990-09-01), None
patent: 2-254421 (1990-10-01), None
patent: H04-221926 (1992-08-01), None
patent: H05-142507 (1993-06-01), None
patent: 5-216062 (1993-08-01), None
patent: H06-130419 (1994-05-01), None
patent: 6-202151 (1994-07-01), None
patent: 6-202153 (1994-07-01), None
patent: 07-244295 (1995-09-01), None
Hayashi Shougo
Kinjo Takeshi
Okamoto Kenji
Tachibanaki Makoto
Takizawa Hidaki
Greer Burns & Crain Ltd.
Nguyen Khiem D
Sharp Kabushiki Kaisha
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