Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-05-29
1998-04-21
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 349149, 349150, 349151, 349152, H01L 2904, H01L 31032
Patent
active
057420742
ABSTRACT:
A TFT matrix-type liquid crystal display device is used in laptop personal coputers and wall TV's. On a transparent insulating substrate there are formed gate bus lines for commonly connecting the gates of thin film transistors, drain bus lines for commonly connecting the drains of the thin film transistors, and outside terminals and outside terminals opposed respectively to the ends of the gate bus lines and the drain bus lines, opposed respectively to the ends of the gate bus lines and the drain bus lines. Gate connection lines for commonly connecting the gate bus lines and drain connection lines for commonly connecting the drain bus lines are formed on the transparent insulating substrate in regions inner of the outside terminals. The thin film transistor matrix device can be fabricated without occurrence of short circuit defects, with little characteristic change and with high yields.
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Hayashi Shougo
Kinjo Takeshi
Okamoto Kenji
Tachibanaki Makoto
Takizawa Hidaki
Abraham Fetsum
Fujitsu Limited
Thomas Tom
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