Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1993-12-28
1996-01-09
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 71, 257 72, 257292, 257448, 359 59, 359 87, 359 88, H01L 2712, H01L 2978
Patent
active
054830826
ABSTRACT:
A thin film transistor matrix device comprises a transparent insulating substrate, a thin film transistor unit, a picture element unit, a storage capacitance unit, a gate terminal unit, and a drain terminal unit, the storage capacitance unit including a storage capacitance electrode formed on the transparent insulating substrate and formed of a metal layer of the same material as the gate electrode; a dielectric film formed on the storage capacitance electrode and formed of an insulating film common with the gate insulating film and a non-doped semiconductor layer of the same material as the semiconductor active layer; and a counter electrode formed on the dielectric film and formed of a doped semiconductor layer of the same material as the semiconductor contact layer and a metal layer of the same material as the source electrode and the drain electrode, the counter electrode being connected to the picture element electrode through a contact hole opened in a protecting film common with the passivation film. Thus, the fabrication process of the TFT matrix device can be simplified, and lower costs can be realized. Characteristic changes of the storage capacitance can be prevented, and yields and reliability can be improved.
Hirota Shiro
Majima Teiji
Nasu Yasuhiro
Nonaka Kazuo
Sato Seii
Fujitsu Limited
Mintel William
Tran Minhloan
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