Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-11-05
2010-11-09
Sandvik, Benjamin P (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257SE29120
Reexamination Certificate
active
07829896
ABSTRACT:
A thin film transistor (TFT) that comprises a gate electrode on a substrate, a gate insulation layer on the gate electrode, an active layer having a source region, a drain region, and a channel region on the gate insulation layer, and a source electrode and a drain electrode formed over the source region and drain region of the active layer respectively and facing each other with respect to the channel region. The profile of channel region between the source electrode and drain electrode is changed in a bend line. A method for forming the TFT is also provided.
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U.S. Appl. No. 12/104,575, filed Apr. 17, 2008, Xinxin Li.
Lee Chang Hee
Long Chunping
Wang Wei
Wu Hongjiang
Beijing Boe Optoelectronics Technology Co., Ltd.
Hass & Nesbitt LLC
Nesbitt Daniel F.
Sandvik Benjamin P
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