Thin film transistor, manufacturing method therefor and liquid c

Details Thin film transistor, manufacturing method therefor and liquid c Thin film transistor, manufacturing method therefor and liquid c

1998-04-02

2000-03-07

Sikes, William L.

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

257 66, 257 72, G02F 1136, H01L 2976, H01L 310312

Patent

active

060347481

ABSTRACT:
With a conventional thin film transistor comprising a plurality of series-connected thin film transistors each having a plurality of LDD structures, leakage current can be decreased to a large effect but the area of an element can hardly be reduced. By connecting gate electrodes (15) of a plurality of thin film transistors only with an implanted region (13b) which is formed by implanting an impurity at a low concentration into a semiconductor thin film employed as an active layer, both reduction in element size and decrease in leakage current can be realized.

REFERENCES:
patent: 5693959 (1997-12-01), Inoue et al.
patent: 5834797 (1998-11-01), Yamanaka
International Display Research Conference '93, by Y. Hayashi et al., pp. 465-468.

Affiliated with

Also associated with

Rating

Thin film transistor, manufacturing method therefor and liquid c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film transistor, manufacturing method therefor and liquid c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor, manufacturing method therefor and liquid c will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-368057