Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2006-11-22
2008-08-12
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S163000, C438S719000, C257SE33001, C257SE21411
Reexamination Certificate
active
07410818
ABSTRACT:
A semiconductor film, which is located over a gate electrode for forming a channel region between a source electrode and a drain electrode, has a width greater than a width of the source electrode and a width of the drain electrode located over the gate electrode. Irregularities are formed in a width direction of the semiconductor film on both edge portions in the channel region.
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Japanese Office Action dated Sep. 18, 2007 with Partial English Translation.
Kimura Satoshi
Ohishi Mitsuma
Fourson George
McGinn IP Law Group PLLC
NEC LCD Technologies Ltd.
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