Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2009-05-01
2010-12-14
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257SE21411, C257SE33062, C257SE27111, C438S149000
Reexamination Certificate
active
07851806
ABSTRACT:
The present invention discloses a method for manufacturing a TFT LCD array substrate by utilizing the gray tone mask technology and the photoresist lifting-off technology with only two masks in two photolithography processes, and to a TFT LCD array substrate manufactured by the same. In the resultant array substrate, the gate line and the data line are perpendicular to and intersect with each other to define the pixel area, and one of the gate line and the data line is continuous and the other is discontinuous. The array substrate is covered with a passivation protection film. The disconnected gate line or the data line is connected together through the via holes formed in the passivation protection film and the connecting conductive film formed on the passivation protection film. The data line and the source electrode and drain electrode of the TFT are made of the same conductive film, and the connecting conductive film and the pixel electrode are made of the same conductive film in the same photolithography process.
REFERENCES:
patent: 2006/0141685 (2006-06-01), Kim et al.
patent: 11-258625 (1999-09-01), None
patent: 2001-147651 (2001-05-01), None
patent: 2002-098995 (2002-04-01), None
Long Chunping
Rim Seung Moo
Zhao Jigang
Beijing BOE Optoelectronics Technology Co., Ltd.
Hasse & Nesbitt LLC
Le Dung A.
Nesbitt Daniel F.
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