Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2006-04-04
2006-04-04
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S149000, C438S161000
Reexamination Certificate
active
07022536
ABSTRACT:
This invention relates to a TFT-LCD and a manufacturing method therefor which etches triple layer patterns in a single process step. As a result, the number of masking processes is reduced and a high quality device is produced with less defects. The method comprises the steps of: depositing a gate metal on a substrate; forming and a gate pad a gate electrode by etching the gate metal; forming an insulating layer on both the gate metal and the gate pad; depositing an amorphous silicon layer on the insulating layer; depositing an n+ amorphous silicon layer on the amorphous silicon layer; depositing a source/drain on the n+ amorphous silicon layer; etching the amorphous silicon, the n+ amorphous silicon layer and the source/drain to form a triple layer pattern; etching the n+ amorphous silicon layer and the source/drain to form a source/drain electrode; depositing a passivation layer; etching a passivation layer to expose both a portion of the source/drain electrode and a portion of the gate pad; depositing a pixel electrode layer on the passivation layer; and etching the pixel electrode layer to form a pixel electrode.
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Hirata, Takeshi Manufacture of semiconductor device Apr. 30, 1993, JP405109719 Abstract.
McGuireWoods LLP
Nguyen Khiem
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