Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-06-24
2000-02-22
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 57, 257344, 257335, H01L 2976, H01L 31036, H01L 31112, H01L 310376
Patent
active
060283262
ABSTRACT:
A crystalline silicon thin film transistor having an LDD (lightly doped drain) structure and a process for fabricating the same, which comprises introducing a catalyst element for accelerating crystallization at a concentration of 1.times.10.sup.15 cm.sup.-3 or more but less than 2.times.10.sup.19 cm.sup.-3 to the impurity region in an amorphous silicon film, crystallizing the amorphous film thereafter, and after forming gate electrode and gate insulating film, implanting an impurity in a self-aligned manner to establish an LDD structure.
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Takemura Yasuhiko
Uochi Hideki
Chaudhuri Olik
Costellia Jeffrey L.
Semiconductor Energy Laboratory Co,. Ltd.
Weiss Howard
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